加工定制否	品牌GenUV
型号GUVB-S12SD	种类光学接收器件
货号1	波段范围近紫外
运转方式单次脉冲式	激励方式电激励式
工作物质半导体	光路径反射型外光路
输出形式光敏器件型	传输信号高线性型
速度高速	通道单通道
输出波长500nm	线宽600mm
是否跨境货源否

features aluminium gallium nitride based material
schottky-type photodiode
photovoltaic mode operation
good visible blindness
high responsivity & low dark current
applications uv index monitoring outline diagrams and dimensions
absolute maximum ratings
symbol unit
tst ℃
top ℃
vr, max. v
storage temperature
operating temperature
reverse voltage
f dc
3
-40
remark
uv-b sensor
guvb-s12sd
parameter min. max.
90
-30 85
cathode
anode
if,max. ?
popt w/?
tsol ℃
characteristics (at 25℃)
symbol min. max. unit
id 1 ?
62 75 ?
?
itc ％/℃
r a/w
λ 240 320 ?
?
responsivity curve photocurrent along uv power
caution
esd can damage the device hence please avoid esd.
uvb lamp
λ = 300 ?, vr = 0 v
10% of r
temperature coefficient
responsivity
spectral detection range
iph
0.076
0.11
260 within 10 sec.
1
test conditions
vr = 0.1 v
uvb lamp, 1?/?
1 uvi
optical source power range
active area
69
1.4
0.1
parameter typ.
photo current
dark current
※notice: apply to us in the case that optical source power is over 100?/?
100m uvb lamp
soldering temperature
forward current
0.1μ
0 3 6 9 12 15
0

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